4.7 Article

Energetics and Electronic Structure of Triangular Hexagonal Boron Nitride Nanoflakes

期刊

SCIENTIFIC REPORTS
卷 8, 期 -, 页码 -

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NATURE PUBLISHING GROUP
DOI: 10.1038/s41598-018-34874-x

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资金

  1. JST-CREST from Japan Science and Technology Agency [JPMJCR1532, JPMJCR1715]
  2. JSPS KAKENHI Grant from Japan Science and Technology Agency [JP17H01069, JP16H00898, JP16H06331]
  3. Joint Research Program on Zero-Emission Energy Research, Institute of Advanced Energy, Kyoto University

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We studied the energetics and electronic structures of hexagonal boron nitrogen (h-BN) nanoflakes with hydrogenated edges and triangular shapes with respect to the edge atom species. Our calculations clarified that the hydrogenated h-BN nanoflakes with a triangular shape prefer the N edges rather than B edges irrespective of the flake size. The electronic structure of hydrogenated h-BN nanoflakes depends on the edge atom species and their flake size. The energy gap between the lowest unoccupied (LU) and the highest occupied (HO) states of the nanoflakes with N edges is narrower than that of the nanoflakes with B edges and the band gap of h-BN. The nanoflakes possess peculiar non-bonding states around their HO and LU states for the N and B edges, respectively, which cause spin polarization under hole or electron doping, depending on the edge atom species.

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