4.6 Article

Silver Dopant-Induced Effect on Structural and Optoelectronic Properties of CdSe Thin Films

期刊

ACTA METALLURGICA SINICA-ENGLISH LETTERS
卷 32, 期 5, 页码 541-549

出版社

CHINESE ACAD SCIENCES, INST METAL RESEARCH
DOI: 10.1007/s40195-018-0824-3

关键词

Semiconductors; Thin films; Vapor deposition; Electron microscopy; Electrical properties

资金

  1. Major Research Project of University Grant Commission (UGC), N. Delhi, India [42-781/2013 (SR)]

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Thin films of CdSe and silver (Ag)-doped CdSe have been prepared on glass substrates by thermal evaporation in argon gas atmosphere. X-ray diffraction pattern indicates the presence of hexagonal structure with preferred orientation along (100) plane. Elemental composition of the thin films has been analyzed using energy dispersive X-ray analysis. Scanning electron microscopy has been used to investigate the morphology of the thin films. Transmission electron microscope reveals spherical nature of nanoparticles. A decrease in the band gap due to the formation of band tails in the band gap with increase in Ag doping in CdSe lattice has been observed. Photoluminescence spectra indicate redshift in band edge emission peak with increase in Ag doping in CdSe. Electrical conductivity measurements are also studied, and two types of conduction mechanisms taking part in the transport phenomena are observed. Hall measurements indicate n-type behavior of undoped and Ag-doped CdSe thin films.

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