期刊
IEEE PHOTONICS JOURNAL
卷 10, 期 6, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOT.2018.2877632
关键词
Infrared detector; photodetector; type-II superlattice; InAs/InAsSb; heterostructure; unipolar barrier; nBn; focal plane array
资金
- National Aeronautics and Space Administration
We report focal plane array (FPA) results on a mid-wavelength InAs/InAsSb type-II strained layer superlattice (T2SLS) unipolar barrier infrared detector with a cutoff wavelength of 5.4 mu m. For 300 K background in the 3-5-mu m band, f/2 aperture, an FPA operating at 150 K exhibits a mean noise equivalent differential temperature (NEDT) of 18.5 mK, and an NEDT operability of 99.7%. The NE Delta T distribution has a width of 8 mK, with no noticeable distribution tail, indicating excellent uniformity. The mean noise-equivalent irradiance is 9.1 x 10(11) photons/sec-cm(2). The mean quantum efficiency is 49.1% without antireflection coating, and the mean specific detectivity (D*) is 2.53 x 10(11) cm-Hz(1/2)/W. Benefitting from an absorber material with a much longer Shockley-Read-Hall minority carrier lifetime, and a device architecture that suppresses generation-recombination and surface-leakage dark current, the InAs/InAsSb T2SLS barrier infrared detector FPA has demonstrated a significantly higher operating temperature than the mid-wavelength infrared market-leading InSb.
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