期刊
THIN SOLID FILMS
卷 670, 期 -, 页码 34-40出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2018.12.003
关键词
Photovoltaics; Copper indium gallium selenide; Narrow bandgap; Thin film solar cells; Tandem solar cells; Rubidium fluoride; Post deposition treatment
类别
资金
- Swiss National Science Foundation (SNF), Switzerland [407040_153916 / 1 (SNF)-NRP70, PV2050, 20NA21_150950]
- SNF-NanoTera, Switzerland [SI/501805-01]
- Swiss Federal Office of Energy (SFOE), Switzerland [SI/501805-01]
- EU [641004]
- Swiss State Secretariat for Education, Research and Innovation (SERI), Switzerland [15.0158]
Multi-junction solar cells are known to have a considerably increased efficiency potential over their typical single junction counterparts. In order to produce low cost and lightweight multi-junction devices, the availability of suitable narrow (< 1.1 eV) bandgap bottom cells is paramount. A possible absorber for such a bottom cell is the Cu(In, Ga)Se-2 (CIGS) compound semiconductor, one of the most efficient thin film materials to date. In this contribution we report on the RbF post deposition treatment of narrow bandgap CIGS absorbers grown with a single bandgap grading approach. We discuss the necessary deposition conditions and the observed improvements on solar cells performance. A certified record efficiency of 18.0% for an absorber with 1.00 eV optoelectronic bandgap is presented and its suitability for perovskite/CIGS tandem devices is shown.
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