期刊
SMALL
卷 15, 期 3, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201804661
关键词
photoinduced memory; program/erase performance; ultrafast charge transfer; van der Waals heterostructures
类别
资金
- National Key Research and Development Program of Ministry of Science and Technology [2018YFB0406603]
- NSFC [61811540408, 61625401, 61574101, U1632156]
- Strategic Priority Research Program of Chinese Academy of Sciences [XDB30000000]
- Natural Science Foundation of Hunan Province [2017RS3021, 2017JJ3033]
Photoinduced memory devices with fast program/erase operations are crucial for modern communication technology, especially for high-throughput data storage and transfer. Although some photoinduced memories based on 2D materials have already demonstrated desirable performance, the program/erase speed is still limited to hundreds of micro-seconds. A high-speed photoinduced memory based on MoS2/single-walled carbon nanotubes (SWCNTs) network mixed-dimensional van der Waals heterostructure is demonstrated here. An intrinsic ultrafast charge transfer occurs at the heterostructure interface between MoS2 and SWCNTs (below 50 fs), therefore enabling a record program/erase speed of approximate to 32/0.4 ms, which is faster than that of the previous reports. Furthermore, benefiting from the unique device structure and material properties, while achieving high-speed program/erase operation, the device can simultaneously obtain high program/erase ratio (approximate to 10(6)), appropriate storage time (approximate to 10(3) s), record-breaking detectivity (approximate to 10(16) Jones) and multibit storage capacity with a simple program/erase operation. It even has a potential application as a flexible optoelectronic device. Therefore, the designed concept here opens an avenue for high-throughput fast data communications.
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