期刊
ACTA MATERIALIA
卷 112, 期 -, 页码 224-230出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2016.04.027
关键词
Defect transport; BaTiO3; Domain structure; Resistance degradation; Phase-field simulation
资金
- U.S. Department of Defense, Air Force [FA9550-14-1-0264, FA9550-14-1-0067]
- National Science Foundation as part of the IUCRC Center for Dielectrics and Piezoelectrics at Penn State [IIP-1361571]
- NSF [DMS-1215066]
- Computational Materials and Chemical Sciences Network (CMCSN)
The semiconducting properties of certain ferroelectric materials, partially caused by the interactions among ferroelectric polarizations, charged domain walls, and conducting point defects, pose a threat to the reliability of ferroelectrics used as dielectric material in capacitor devices, and is not yet fully understood. We proposed a physical model combining the phase -field method for ferroelectric domain structures and diffusion equations for defect transport to study the resistance degradation behavior in multi -domain tetragonal BaTiO3 capacitors. We considered a hypothetical Ni/BaTiO3/Ni single parallel plate capacitor configuration subject to 0.5 V dc bias at 25 degrees C. It is found that 90 degrees domain walls are charged, induce local space charge segregation, and form local electric potential barriers upon external bias that significantly influence the ionic transport behavior. Additionally, the 180 degrees domain walls remain nearly charge neutral and have much less influence on ionic transport. The effect of domain wall and polarization orientations on the leakage current evolution is investigated. Our study could necessitate further understanding on the influence of ferroelectric state, ionic interactions, transport barriers, spatial distributions, and breakdown phenomena. (C)2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据