4.7 Article

Atomic-scale characterization and modeling of 60° dislocations in a high-entropy alloy

期刊

ACTA MATERIALIA
卷 110, 期 -, 页码 352-363

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2016.03.045

关键词

STEM; EAM; High-entropy alloys; Stacking fault energy; Dislocation dissociation

资金

  1. National Science Foundation [DMR-1508505]
  2. Center for Emergent Materials: an NSF MRSEC [DMR-1420451]
  3. Alexander von Humboldt Foundation
  4. Division Of Materials Research
  5. Direct For Mathematical & Physical Scien [1508505] Funding Source: National Science Foundation

向作者/读者索取更多资源

High-entropy alloys (HEAs) are an exciting new class of multi-component alloys some of which have unusual and remarkable properties. As of yet, little is understood about dislocation core structure and stacking fault energies in these alloys. For this study, a five-component, equiatomic alloy (CrMnFeCoNi) was deformed to 5% plastic strain at room temperature. Post-test observations using diffraction contrast scanning transmission electron microscopy (DC-STEM) analysis provide evidence for numerous planar slip bands composed of,1/2 < 110 > dislocations. More detailed analyses of dislocation separation distances were performed using high-order diffraction vector DC-STEM and atomic resolution high angle annular dark field (HAADF) STEM on 1/2 < 110 > dislocations in 60 degrees orientation. Large variations in dissociation distances are found, leading to the concept of a local stacking fault energy (SFE). This finding is supported through embedded-atom-method (EAM) calculations of a model, concentrated, three-element solid solution. For the first time, the Nye tensor and center of symmetry analysis were used collectively to accurately determine dissociation distance. Lastly, using high-resolution energy dispersive X-ray spectroscopy, no ordering or segregation was observed, indicating that this alloys is a true solid solution down to the atomic scale in the recrystallized and lightly deformed state. (C) 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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