Electrical and Photoelectrical Characteristics of ?-Si/Porous-Si/CdS Heterojunctions

Depending on the sizes of the CdS crystallites and silicon pores, electrical and photoelectrical characteristics of c-Si/porous-Si/CdS heterojunctions prepared by electrochemical deposition and anodization, respectively, are studied. The optimal pore size (10-16 nm) is determined, which provides the maximum photoelectric conversion efficiency (7.71%) of heterojunctions.