期刊
REVIEW OF SCIENTIFIC INSTRUMENTS
卷 89, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5055376
关键词
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资金
- National Key R&D Program of China [2017YFA0304004]
- National Natural Science Foundation of China [11674307]
- Chinese Academy of Sciences
- Anhui Initiative in Quantum Information Technologies
High-frequency gating InGaAs/InP single-photon detectors (SPDs) are widely used for applications requiring single-photon detection in the near-infrared region such as quantum key distribution. Reducing SPD size is highly desired for practical use, which is favorable to the implementation of further system integration. Here we present, to the best of our knowledge, the most compact high-frequency sine wave gating (SWG) InGaAs/InP SPD. We design and fabricate an InGaAs/InP single-photon avalanche diode (SPAD) with optimized semiconductor structure and then encapsulate the SPAD chip and a mini-thermoelectric cooler inside a butterfly package with a size of 12.5 mm x 22 mm x 10 mm. Moreover, we implement a monolithic readout circuit for the SWG SPD in order to replace the quenching electronics that is previously designed with board-level integration. Finally, the components of SPAD, the monolithic readout circuit, and the affiliated circuits are integrated into a single module with a size of 13 cm x 8 cm x 4 cm. Compared with the 1.25 GHz SWG InGaAs/InP SPD module (25 cm x 10 cm x 33 cm) designed in 2012, the volume of our miniaturized SPD is reduced by 95%. After the characterization, the SPD exhibits excellent performance with a photon detection efficiency of 30%, a dark count rate of 2.0 kcps, and an afterpulse probability of 8.8% under the conditions of 1.25 GHz gating rate, 100 ns hold-off time, and 243 K. Also, we perform the stability test over one week, and the results show the high reliability of the miniaturized SPD module. Published by AIP Publishing.
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