Slingshot Nonsequential Double Ionization as a Gate to Anticorrelated Two-Electron Escape

At intensities below the recollision threshold, we show that recollision-induced excitation with one electron escaping fast after recollision and the other electron escaping with a time delay via a Coulomb slingshot motion is one of the most important mechanisms of nonsequential double ionization (NSDI), for strongly driven He at 400 nm. Slingshot NSDI is a general mechanism present for a wide range of low intensities and pulse durations. Anticorrelated two-electron escape is its striking hallmark. This mechanism offers an alternative explanation of anticorrelated two-electron escape obtained in previous studies.