期刊
PHYSICAL REVIEW LETTERS
卷 121, 期 17, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.121.176803
关键词
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资金
- Italian Ministry of University and Research through the PRIN project OXIDE
- Sapienza University of Rome
- Gordon and Betty Moore Foundation's EPiQS Initiative [GBMF4418]
- National Science Foundation (NSF) [EFMA-1542798]
- PALM LABEX funding [AIR2DES]
The Berreman effect (BE) allows one to study the electrodynamics of ultrathin conducting films at the surface of dielectrics by use of grazing-angle infrared spectroscopy and polarized radiation. Here, we first apply the BE to the two-dimensional electron system (2DES) at the interface between a high-purity film of the topological insulator Bi2Se3 and its sapphire substrate. We determine for the 2DES a charge density n(s) = (8 +/- 1) x 10(12) cm(-2), a thickness d = 0.6 +/- 0.2 nm, and a mobility mu(IR) = 290 +/- 30 cm(2)/Vs. Within errors, all of these parameters result in being independent of temperature between 300 and 10 K. These findings consistently indicate that the 2DES is formed by topological surface states, whose infrared response is then directly observed here.
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