期刊
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
卷 13, 期 3, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.201800564
关键词
CIGSe thin film solar cells; crystal structure; defect calculation; electronic structure; RbInSe2 deposition
资金
- German Federal Ministry for Economic Affairs and Energy in the frame of the speed CIGS project [0324095C, 0324095E]
The formation of an Rb-containing In-Se compound at the surface of Cu(In,Ga)Se-2 (CIGS) thin films is assumed to be part of the mechanism of RbF post-deposition treatments (PDTs) performed on these absorber layers. Alkali-PDTs have acquired attention lately as they significantly enhance the efficiency of CIGS solar cells. In this contribution the formation of various phases during the RbF-PDT has been investigated. The results indicate that RbInSe2 is the most probable phase to form. Combining theoretical and experimental investigations, fundamental properties of a thermally co-evaporated RbInSe2 thin film are reported in order to serve as reference values in further studies.
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