期刊
OPTICS EXPRESS
卷 26, 期 25, 页码 33108-33115出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.26.033108
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资金
- National Key R&D Program of China [2017YFB0403300, 2017YFB0403302]
- Natural Science Foundation of the Jiangsu Higher Education Institutions of China [18KJB510047]
- The National Natural Science Foundation of China [11847166]
We demonstrate very high luminous efficacy InGaN-based green light-emitting diodes (LEDs) grown on c-plane patterned sapphire substrates (PSS) using metal organic chemical vapor deposition (MOCVD). The 527 nm green LEDs show a peak external quantum efficiency (EQE) of 53.3%, a peak wall-plug efficiency (WPE) of 54.1% and a peak luminous efficacy of 329 In/W, respectively. A high EQE of 38.4%, a WPE of 32.1% and a very low forward voltage of 2.86 V were obtained at a typical working current density of 20 A/cm(2). By operating low cost green LEDs at a low current density, our devices (0.5 mm(2)) demonstrating an EQE and a WPE higher than 50% and an efficacy of 259 lm/W at 4 A/cm(2) with an output power of 24 mW. High crystal quality of the InGaN/GaN MQWs was characterized by X-ray diffraction (XRD) and the advantage of the epitaxy design was investigated by APSYS software simulation. These results provide a simple way to achieve very high efficiency InGaN green LEDs. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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