期刊
ACS NANO
卷 10, 期 8, 页码 7331-7338出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.6b03602
关键词
single photon source; hexagonal boron nitride; point defects; robust; electron beam irradiation; density functional theory
类别
资金
- Australian Research Council [DP140102721, DE130100592]
- FEI Company
- Air Force Office of Scientific Research, United States Air Force
- AOARD [FA2386-15-1-4044]
- Swiss National Science Foundation (SNSF)
- Samsung Scholarship
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-SC0001088]
- National Science Foundation EFRI 2-DARE [1542863]
- Emerging Frontiers & Multidisciplinary Activities
- Directorate For Engineering [1542863] Funding Source: National Science Foundation
Hexagonal boron nitride (hBN) is an emerging two-dimensional material for quantum photonics owing to its large bandgap and hyperbolic properties. Here we report two approaches for engineering quantum emitters in ISBN multilayers using either electron beam irradiation or annealing and characterize their photophysical properties. The defects exhibit a broad range of multicolor room-temperature single photon emissions across the visible and the near-infrared spectral ranges, narrow line widths of sub-10 nm at room temperature, and a short excited-state lifetime, and high brightness. We show that the emitters can be categorized into two general groups, but most likely possess similar crystallographic structure. Remarkably, the emitters are extremely robust and withstand aggressive annealing treatments in oxidizing and reducing environments. Our results constitute a step toward deterministic engineering of single emitters in 2D materials and hold great promise for the use of defects in boron nitride as sources for quantum information processing and nanophotonics.
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