期刊
ACS NANO
卷 10, 期 3, 页码 3852-3858出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.6b00980
关键词
van der Waals heterostructure; MoS2; MoTe2; interlayer transition; type-II band alignment
类别
资金
- NSFC [61376016, 61290304]
- National Basic Research Program of China [2012CB934301]
We demonstrate the type -II staggered band alignment in MoTe2/MoS2 van der Waals (vdW) heterostructures and an interlayer optical transition at similar to 1.55 The photoinduced charge separation between the MoTe2/MoS2 vdW heterostructure is verified by Kelvin probe force microscopy (KPFM) under illumination, density function theory (DFT) simulations and photoluminescence (PL) spectroscopy. Photoelectrical measurements of MoTe2/MoS2 vdW heterostructures show a distinct photocurrent response in the infrared regime (1550 nm). The creation of type -II vdW heterostructures with strong interlayer coupling could improve our fundamental understanding of the essential physics behind vdW heterostructures and help the design of next-generation infrared optoelectronics.
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