期刊
ACS Nano
卷 10, 期 7, 页码 7142-7146出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.6b03382
关键词
graphene; transistor; CMOS; hybrid; integrated; circuit
类别
资金
- Center for Advanced Soft Electronics - Ministry of Science, ICT and Future Planning as Global Frontier Project [CASE-2011-0031638]
We demonstrate a hybrid integration of a graphene-based analog circuit and a silicon-based digital circuit in order to exploit the strengths of both graphene and silicon devices. This mixed signal circuit integration was achieved using a three-dimensional (3-D) integration technique where a graphene FET multimode phase shifter is fabricated on top of a silicon complementary metal oxide semiconductor fieldeffect transistor (CMOS FET) ring oscillator. The process integration scheme presented here is compatible with the conventional silicon CMOS process, and thus the graphene circuit can successfully be integrated on current semiconductor technology platforms for various applications. This 3-D integration technique allows us to take advantage of graphene's excellent inherent properties and the maturity of current silicon CMOS technology for future electronics.
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