期刊
ACS NANO
卷 10, 期 11, 页码 10516-10523出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.6b06496
关键词
two-dimensional materials; heterostructure; transition metal dichalcogenides; chemical vapor deposition
类别
资金
- KAUST
- National Natural Science Foundation of China [51602200]
- Science and Technology Planning Project of Guangdong Province [2016B050501005]
Two-dimensional transition metal dichalcogenides (TMDCs) have shown great promise in electronics and optoelectronics due to their unique electrical and optical properties. Heterostructured TMDC layers such as the laterally stitched TMDCs offer the advantages of better electronic contact and easier band offset tuning. Here, we demonstrate a photoresist-free focused ion beam (FIB) method to pattern as-grown TMDC monolayers by chemical vapor deposition, where the exposed edges from FIB etching serve as the seeds for growing a second TMDC material to form desired lateral heterostructures with arbitrary layouts. The proposed lithographic and growth processes offer better controllability for fabrication of the TMDC heterostrucuture, which enables the construction of devices based on heterostructural monolayers.
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