4.8 Article

Well-Defined Nanostructured, Single Crystalline TiO2 Electron Transport Layer for Efficient Planar Perovskite Solar Cells

期刊

ACS NANO
卷 10, 期 6, 页码 6029-6036

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.6b01575

关键词

perovskite; solar cell; electron transport layer; TiO2; nanostructures; anodization

资金

  1. National Research Foundation of Korea (NRF) grant - Korea government (MSIP) [2015R1A2A1A10054230]
  2. Center for Advanced Soft Electronics under the Global Frontier Research Program [NRF-2012M3A6A5055225]
  3. Nano Material Technology Development Program [2012M3A7B4049989]
  4. EPSRC [EP/G049653/1] Funding Source: UKRI
  5. Engineering and Physical Sciences Research Council [EP/G049653/1] Funding Source: researchfish

向作者/读者索取更多资源

An electron transporting layer (ETL) plays an important role in extracting electrons from a perovskite layer and blocking recombination between electrons in the fluorine-doped tin oxide (FTO) and holes in the perovskite layers, especially in planar perovskite solar cells. Dense TiO2 ETLs prepared by a solution processed spin-coating method (S-TiO2) are mainly used in devices due to their ease of fabrication. Herein, we found that fatal morphological defects at the S-TiO2 interface due to a rough FTO surface, including an irregular film thickness, discontinuous areas, and poor physical contact between the S-TiO2 and the FTO layers, were inevitable and lowered the charge transport properties through the planar perovskite solar cells. The effects of the morphological defects were mitigated in this work using a TiO2 ETL produced from sputtering and anodization. This method produced a well-defined nanostructured TiO2 ETL with an excellent transmittance, single-crystalline properties, a uniform film thickness, a large effective area, and defect-free physical contact with a rough substrate that provided outstanding electron extraction and hole blocking in a planar perovskite solar cell. In planar perovskite devices, anodized TiO2 ETL (A-TiO2) increased the power conversion efficiency by 22% (from 12.5 to 15.2%), and the stabilized maximum power output efficiency increased by 44% (from 8.9 to 12.8%) compared with S-TiO2. This work highlights the importance of the ETL geometry for maximizing device performance and provides insights into achieving ideal ETL morphologies that remedy the drawbacks observed in conventional spin-coated ETLs.

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