期刊
ACS NANO
卷 10, 期 7, 页码 7039-7046出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.6b03112
关键词
heterostructures; van der Waals epitaxy; molybdenum disulfide; graphene; TaS2; SnS2; chemical vapor deposition
类别
资金
- U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-FG02-09ER46664]
- NSF Graduate Research Fellowship Program
- China Scholarship Council
- Department of Energy (DOE) Office of Science Early Career Research Program through the Office of Basic Energy Sciences [DE-SC0006414]
- Department of Defense (DOD) Air Force Office of Scientific Research through the National Defense Science and Engineering Graduate Fellowship [32 CFR 168a]
- U.S. Department of Energy (DOE) [DE-SC0006414] Funding Source: U.S. Department of Energy (DOE)
The fascinating semiconducting and optical properties of monolayer and few-layer transition metal dichalcogenides, as exemplified by MoS2, have made them promising candidates for optoelectronic applications. Controllable growth of heterostructures based on these layered materials is critical for their successful device applications. Here, we report a direct low temperature chemical vapor deposition (CVD) synthesis of MoS2 monolayer/multilayer vertical heterostructures with layer-controlled growth on a variety of layered materials (SnS2, TaS2, and graphene) via van der Waals epitaxy. Through precise control of the partial pressures of the MoCl5 and elemental sulfur precursors, reaction temperatures, and careful tracking of the ambient humidity, we have successfully and reproducibly grown MoS2 vertical heterostructures from 1 to 6 layers over a large area. The monolayer MoS2 heterostructure was verified using cross-sectional high resolution transmission electron microscopy (HRTEM) while Raman and photoluminescence spectroscopy confirmed the layer-controlled MoS2 growth and heterostructure electronic interactions. Raman, photoluminescence, and energy dispersive X-ray spectroscopy (EDS) mappings verified the uniform coverage of the MoS, layers. This reaction provides an ideal method for the scalable layer controlled growth of transition metal dichalcogenide heterostructures via van der Waals epitaxy for a variety of optoelectronic applications.
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