期刊
ACS NANO
卷 10, 期 5, 页码 5413-5418出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.6b01643
关键词
inorganic-organic perovskites; resistive switching memory; flexible memory; solvent engineering; vacancy migration
类别
资金
- National Research Foundation of Korea [NRF-2015R1A2A1A15055918]
- Future Semiconductor Device Technology Development Program - Ministry of Trade, Industry & Energy (MOTIE)/Korea Semiconductor Research Consortium (KSRC) [10045226]
- Brain Korea 21 PLUS project (Center for Creative Industrial Materials)
- Korea Evaluation Institute of Industrial Technology (KEIT) [10045226] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2015R1A2A1A15055918] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Active research has been done on hybrid organic inorganic perovskite materials for application to solar cells with high power conversion efficiency. However, this material often shows hysteresis, which is undesirable, shift in the current voltage curve. The hysteresis may come from formation of defects and their movement in perovskite materials. Here, we utilize the defects in perovskite materials to be used in memory operations. We demonstrate flexible nonvolatile memory devices based on hybrid organic inorganic perovskite as the resistive switching layer on a plastic substrate. A uniform perovskite layer is formed on a transparent electrode-coated plastic substrate by solvent engineering. Flexible nonvolatile memory based on the perovskite layer shows reproducible and reliable memory characteristics in terms of program/erase operations, data retention, and endurance properties. The memory devices also show good mechanical flexibility. It is suggested that resistive switching is done by migration of vacancy defects and formation of conducting filaments under the electric field in the perovskite layer. It is believed that organic inorganic perovskite materials have great potential to be used in high-performance, flexible memory devices.
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