期刊
ACS NANO
卷 10, 期 8, 页码 8067-8077出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.6b04165
关键词
ReSe2; ambipolar; anisotropy; linear dichroism photodetection
类别
资金
- National Young 1000 Talent Plan
- National Natural Science Foundation of China [61322407, 11474058, 11322441, 11525417]
- Fund of Shanghai Science and Technology Foundation [14JC1406400]
- Ten Thousand Talents Program for Young Talents
Atomically thin 2D-layered transition-metal dichalcogenides have been studied extensively in recent years because of their intriguing physical properties and promising applications in nanoelectronic devices. Among them, ReSe2 is an emerging material that exhibits a stable distorted IT phase and strong in-plane anisotropy due to its reduced crystal symmetry. Here, the anisotropic nature of ReSe2 is revealed by Raman spectroscopy under linearly polarized excitations in which different vibration modes exhibit pronounced periodic variations in intensity. Utilizing high-quality ReSe2 nanosheets, top-gate ReSe2 field-effect transistors were built that show an excellent on/off current ratio exceeding 10(7) and a well-developed current saturation in the current voltage characteristics at room temperature. Importantly, the successful synthesis of ReSe2 directly onto hexagonal boron nitride substrates has effectively improved the electron motility over 500 times and the hole mobility over 100 times at low temperatures. Strikingly, corroborating with our density-functional calculations, the ReSe2-based photodetectors exhibit a polarization sensitive photoresponsivity due to the intrinsic linear dichroism originated from high in-plane optical anisotropy. With a back-gate voltage, the linear dichroism photodetection can be unambiguously tuned both in the electron and hole regime. The appealing physical properties demonstrated in this study clearly identify ReSe2 as a highly anisotropic 2D material for exotic electronic and optoelectronic applications.
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