期刊
NANOTECHNOLOGY
卷 30, 期 2, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aae7df
关键词
TFET; transition metal dichalcogenides; steep-slope; NEGF; tight-binding; quantum simulation; MoS2
资金
- NSF [DMR-1231319]
- ARO MURI Award [W911NF-14-0247]
- STC Center for Integrated Quantum Materials
In-plane heterojunction tunnel field effect transistors based on monolayer transition metal dichalcogenides are studied by means of self-consistent non-equilibrium Green's functions simulations and an atomistic tight-binding Hamiltonian. We start by comparing several heterojunctions before focusing on the most promising ones, i.e. WTe2-MoS2 and MoTe2-MoS2. The scalability of those devices as a function of channel length is studied, and the influence of backgate voltages on device performance is analyzed. Our results indicate that, by fine-tuning the design parameters, those devices can yield extremely low subthreshold swings (<5 mV/decade) and I-ON/I-OFF ratios higher than 10(8) at a supply voltage of 0.3 V, making them ideal for ultra-low power consumption.
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