期刊
NANOTECHNOLOGY
卷 30, 期 4, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aaec39
关键词
InGaN; nanowires; hydride vapor phase epitaxy; thermodynamics; compositional tuning
资金
- CNRS [PRC1300]
- GaNeX program of the French ANR agency [ANR-11-LABX-0014]
- program 'Investissements d'avenir' of the French ANR agency
- European Commission (Auvergne FEDER Funds)
- Region Auvergne [ANR-10-LABX-16-01]
- Ministry of Education and Science of the Russian Federation [14.587.21.0040, RFMEFI58717X0040]
- French government IDEX-SITE initiative [16-muIDEX-0001, CAP20-25]
- CPER
Homogenous InGaN nanowires with a controlled indium composition up to 90% are grown on GaN/c-Al2O3 templates by catalyst-free hydride vapor phase epitaxy using InCl3 and GaCl as group III element precursors. The influence of the partial pressures on the growth rate and composition of InGaN nanowires is investigated. It is shown how the InN mole fraction in nanowires can be finely tuned by changing the vapor phase composition. Thermodynamic calculations are presented that take into account different interconnected reactions in the vapor phase and show a good agreement with the compositional data. Energy dispersive x-ray spectroscopy profiles performed on single nanowires show a homogenous indium composition along the entire nanowire length. X-ray diffraction measurements performed on nanowires arrays confirm these data. High-resolution transmission electron microscopy analysis shows the wurtzite crystal structure with a reduced defect density for InGaN nanowires with the highest indium content.
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