期刊
NANOSCALE RESEARCH LETTERS
卷 13, 期 -, 页码 -出版社
SPRINGEROPEN
DOI: 10.1186/s11671-018-2792-y
关键词
Surface quantum dots; Photoluminescence; Carrier dynamics; Interaction
资金
- Natural Science Foundation of People's Republic of China [61774053]
- Advanced Talents Incubation Program of the Hebei University [8012605]
- Postgraduate's Innovation Fund Project of Hebei University [hbu2018ss65]
- Natural Science Foundation of the United States (EPSCoR Grant) [OIA-1457888]
We investigate the optical properties of InGaAs surface quantum dots (SQDs) in a composite nanostructure with a layer of similarly grown buried quantum dots (BQDs) separated by a thick GaAs spacer, but with varied areal densities of SQDs controlled by using different growth temperatures. Such SQDs behave differently from the BQDs, depending on the surface morphology. Dedicated photoluminescence (PL) measurements for the SQDs grown at 505 degrees C reveal that the SQD emission follows different relaxation channels while exhibiting abnormal thermal quenching. The PL intensity ratio between the SQDs and BQDs demonstrates interplay between excitation intensity and temperature. These observations suggest a strong dependence on the surface for carrier dynamics of the SQDs, depending on the temperature and excitation intensity.
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