4.8 Article

Germanium Quantum-Well Josephson Field-Effect Transistors and Interferometers

期刊

NANO LETTERS
卷 19, 期 2, 页码 1023-1027

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.8b04275

关键词

superconducting quantum interference device; two-dimensional hole gas; proximity-effect-induced superconductivity; Josephson field-effect transistor; Ge quantum well

资金

  1. Agence Nationale de la Recherche through the TOPONANO project
  2. NSF [PIRE-1743717]
  3. Grenoble Nanoscience Foundation
  4. CEA program DRF Impulsion Super-G
  5. Agence Nationale de la Recherche through PIRE-HYBRID project

向作者/读者索取更多资源

Hybrid superconductor semiconductor-structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve the realization of topological superconducting systems as well as gate-tunable superconducting quantum bits. Here, we combine a SiGe/Ge/SiGe quantum-well heterostructure hosting high-mobility two-dimensional holes and aluminum superconducting leads to realize prototypical hybrid devices, such as Josephson field-effect transistors (JoFETs) and superconducting quantum interference devices (SQUIDs). We observe gate-controlled supercurrent transport with Ge channels as long as one micrometer and estimate the induced superconducting gap from tunnel spectroscopy measurements. Transmission electron microscopy reveals the diffusion of Ge into the Al contacts, whereas no Al is detected in the Ge channel.

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