期刊
NANO LETTERS
卷 19, 期 1, 页码 197-202出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.8b03696
关键词
Bi2O2Se; 2D materials; low residual carrier concentration; high mobility; field-effect transistor; chemical vapor deposition
类别
资金
- National Basic Research Program of China [2014CB932500, 2016YFA0200101, 2014CB920900]
- National Natural Science Foundation of China [21733001, 21525310, 11774010]
- China Postdoctoral Science Foundation Funded Project (Postdoctoral Innovative Talents Support Program)
The air-stable and high-mobility two-dimensional (2D) Bi2O2Se semiconductor has emerged as a promising alternative that is complementary to graphene, MoS2, and black phosphorus for next-generation digital applications. However, the room-temperature residual charge carrier concentration of 2D Bi2O2Se nanoplates synthesized so far is as high as about 10(19)-10(20) cm(-3), which results in a poor electrostatic gate control and unsuitable threshold voltage, detrimental to the fabrication of 0 high-performance low-power devices. Here, we first present a facile approach for synthesizing 2D Bi2O2Se single crystals with ultralow carrier concentration of similar to 10(16) cm(-3) and high Hall mobility up to 410 cm(2) V-1 s(-1) simultaneously at room temperature. With optimized conditions, these high-mobility and low-carrier-concentration 2D Bi2O2Se nanoplates with domain sizes greater than 250 m and thicknesses down to 4 layers (similar to 2.5 nm) were readily grown by using Se and Bi2O3 powders as coevaporation sources in a dual heating zone chemical vapor deposition (CVD) system. High-quality 2D Bi2O2Se crystals were fabricated into high-performance and low-power transistors, showing excellent current modulation of >10(6), robust current saturation, and low threshold voltage of -0.4 V. All these features suggest 2D Bi2O2Se as an alternative option for high-performance low-power digital applications.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据