期刊
ACS NANO
卷 10, 期 8, 页码 7982-7989出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.6b03929
关键词
2D materials; 2D silicon dioxide; dielectric; exfoliation; transfer; PMMA assisted
类别
资金
- Deutsche Forschungsgemeinschaft [CRC 1109]
- Alexander von Humboldt Foundation
An atomically smooth silica bilayer is transferred from the growth substrate to a new support via mechanical exfoliation at millimeter scale. The atomic structure and morphology are maintained perfectly throughout the process. A simple heating treatment results in complete removal of the transfer medium. Low-energy electron diffraction, Auger electron spectroscopy, scanning tunneling microscopy, and environmental scanning electron microscopy show the success of the transfer steps. Excellent chemical and thermal stability result from the absence of dangling bonds in the film structure. By adding this wide band gap oxide to the toolbox of 2D materials, possibilities for van der Waals heterostructures will be broadened significantly.
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