期刊
ACS APPLIED MATERIALS & INTERFACES
卷 8, 期 37, 页码 24744-24752出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b07029
关键词
organic field-effect transistors; TIPS-pentacene/PTAA; contact resistance; contact doping molybdenum tris-[1,2-bis(trifluoromethyl)ethane-1,2-dithiolend molybdenum trioxide; top-gate geometry; Fermi-level pinning
资金
- Samsung Display
- Department of the Navy, Office of Naval Research [N00014-14-1-0580, N00014-14-1-0126]
- Mitsubishi Chemicals [AGR DTD 09/01/14]
- Renewable Bioproducts Institute at Georgia Tech
- USDA [13-JV-11111129-079]
- University of Cologne, Germany
We report on the reduction of contact resistance in solution-processed TIPS-pentacene (6,13-bis(tridsopropylsilylethynyl)pentacene) and PTAA (poly[bis(4phenyl)(2,4,6-trimethylphenyl)amine]) top-gate bottom-contact organic field-effect transistors (OFETs) by using different contact-modification strategies. The study compares the contact resistance values in devices that comprise Au source/ drain electrodes either treated with 2,3,4,5,6-pentafluorothiophenol (PFBT), or modified with an evaporated thin layer of the metal organic molecular dopant molybdenum tris-[1,2bis (triflu o r methyl) eth a ne- 1,2- dithiol e n e] (Mo(tfd)3), or modified with a thin layer of the oxide Mo03. An improved performance is observed in devices modified with Mo(tfd)3 or Mo03 as compared to devices in which Au electrodes are modified with PFBT. We discuss the origin of the decrease in contact resistance in terms of increase of the work function of the modified Au electrodes, Fermi-level pinning effects, and decrease of bulk resistance by electrically doping the organic semiconductor films in the vicinity of the source/drain electrodes.
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