期刊
ACS APPLIED MATERIALS & INTERFACES
卷 8, 期 34, 页码 22151-22158出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b05005
关键词
Cu(In,Ga)Se-2; chemical bath deposition; light/UV soaking effect; p-n heterojunction; photocarriers; defect layer
资金
- New & Renewable Energy project of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) - Korean government Ministry Of Trade, Industry, Energy [20153010011990, 20153000000030]
- R&D Convergence Program of MSIP (Ministry of Science, ICT and Future Planning)
- ISTK (Korea Research Council for Industrial Science and Technology) of the Republic of Korea [B551179-12-01-00]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20153000000030] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Council of Science & Technology (NST), Republic of Korea [B551179-12-01-00] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We fabricated Cu(In,Ga)Se-2 (GIGS) solar cells with a chemical bath deposition (CBD)-ZnS buffer layer grown with varying ammonia concentrations in aqueous solution. The solar cell performance was degraded with increasing ammonia concentration, due to actively dissolved Zn atoms during CBD-ZnS precipitation. These formed interfacial defect states, such as hydroxide species in the CBD-ZnS film, and interstitial and antisite Zn defects at the p-n heterojunction. After light/UV soaking, the CIGS solar cell performance drastically improved, with a rise in fill factor. With the Zn-based buffer layer, the light soaking treatment containing blue photons induced a metastable state and enhanced the CIGS solar cell performance. To interpret this effect, we suggest a band structure model of the p-n heterojunction to explain the flow of photocarriers under white light at the initial state, and then after light/UV soaking. The determining factor is a p+ defect layer, containing an amount of deep acceptor traps, located near the GIGS surface. The p+ defect layer easily captures photoexcited electrons, and then when it becomes quasi-neutral, attracts photoexcited holes. This alters the barrier height and controls the photocurrent at the p-n junction, and fill factor values, determining the solar cell performance.
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