期刊
ACS APPLIED MATERIALS & INTERFACES
卷 8, 期 47, 页码 32083-32088出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b10206
关键词
MoS2; Ferroelectric relaxor; P(VDF-TrFE-CFE); high-kappa; photodetectors
资金
- Major State Basic Research Development Program [2013CB922302, 2016YFA0203900]
- Natural Science Foundation of China [11374320, 61404147, 61574151, 11322441, 61574152]
- Natural Science Foundation of Shanghai [13JC1406000, 14JC1406400]
- Key Research Project of Frontier Sciences of CAS [QYZDB-SSW-JSC016, QYZDB-SSW-JSC031]
Recently, new devices combining two-dimensional (2D) materials with ferroelectrics, have been a new hotspot for promising applications in electronics and optoelectronics. Here, we design a new type of FET using the 2D MoS2 and poly(vinylidene fluoride-trifluoroethylene-chlorofloroethylene) terpolymer ferroelectric relaxor. The devices exhibit excellent performance including a large on/off ratio) and an insignificant leakage current. Moreover, the hysteresis characteristics are effectively modulated for its ferroelectric properties at low temperature. Additionally, a broad range photoresponse (visible to 1.55 mu m) and a high sensitivity (>300 A/W, lambda = 450 nm) are achieved. These results indicate that ferroelectric relaxor can be applied into the high-performance 2D optoelectronic devices.
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