期刊
MATERIALS SCIENCE & ENGINEERING R-REPORTS
卷 135, 期 -, 页码 85-100出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.mser.2018.11.001
关键词
Inorganic p-type semiconductor; Field-effect transistor; Solution process; Printable electronics; Low-temperature process
资金
- Ministry of Science & ICT through the NRF - Korea government [2017R1E1A1A01075360]
- Center for Advanced Soft-Electronics [2013M3A6A5073183]
For decades, inorganic n-type metal-oxide semiconductors have attracted great interest across a wide range of applications due to their excellent electrical property, low cost, high optical transparency, and good ambient stability. The next attention has focused on the development of high-performance p-type semiconductors with comparable opto/electric properties to n-type counterparts. This paper provides a comprehensive overview of recent progress in solution-processed inorganic p-type semiconductors that can be applied as channel layers in thin-film transistors and complementary metal-oxide semiconductor-based integrated circuits. We first introduce conventional p-type oxide semiconductors and review their achievements on related devices. Then, we pay a specific focus on emerging (pseudo)halide materials for realization of transparent, low-temperature and high-performance printable electronics and circuits.
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