4.8 Article

Halide-Substituted Electronic Properties of Organometal Halide Perovskite Films: Direct and Inverse Photoemission Studies

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 8, 期 18, 页码 11526-11531

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b02692

关键词

perovskite; electronic structures; band gap; photoemission spectroscopy; inverse photoemission spectroscopy

资金

  1. National Basic Research Program of China [2014CB932600]
  2. National Natural Science Foundation of China [61520106012, 61522505, 91433116, 11474214]
  3. joint JSPS-NSFC Project [612111116]
  4. Jiangsu Science and Technology Department [BK20140053]
  5. Bureau of Science and Technology of Suzhou Municipality [SYG201525, ZXG201422]
  6. Collaborative Innovation Center of Suzhou Nano Science and Technology
  7. Priority Academic Program Development (PAPD) of Jiangsu Higher Education Institutions
  8. Grants-in-Aid for Scientific Research [26248062] Funding Source: KAKEN

向作者/读者索取更多资源

Solution-processed perovskite solar cells are attracting increasing interest due to their potential in next-generation hybrid photovoltaic devices. Despite the morphological control over the perovskite films, quantitative information on electronic structures and interface energetics is of paramount importance to the optimal photovoltaic performance. Here, direct and inverse photoemission spectroscopies are used to determine the electronic structures and chemical compositions of various methylammonium lead halide perovskite films (MAPbX(3), X = Cl, Br, and I), revealing the strong influence of halide substitution on the electronic properties of perovskite films. Precise control over halide compositions in MAPbX(3) films causes the manipulation of the electronic properties, with a qualitatively blue shift along the I -> Br -> Cl series and showing the increase in ionization potentials from 5.96 to 7.04 eV and the change of transport band gaps in the range from 1.70 to 3.09 eV. The resulting light absorption of MAPbX(3) films can cover the entire visible region from 420 to 800 nm. The results presented here provide a quantitative guide for the analysis of perovskite-based solar cell performance and the selection of optimal carrier-extraction materials for photogenerated electrons and holes.

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