期刊
ACS APPLIED MATERIALS & INTERFACES
卷 8, 期 33, 页码 21770-21775出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b05167
关键词
proton gating; electric double layer (EDL); flexible Si membrane; artificial synapses; spiking logic
资金
- National Science Foundation for Distinguished Young Scholars of China [61425020]
- National Natural Science Foundation of China [11474293]
- National Program on Key Basic Research Project [2012CB933004]
- Program for Ningbo Municipal Science and Technology Innovative Research Team [2016B10005]
- Youth Innovation Promotion Association CAS
- CAS
Ion-conducting materials have received considerable attention for their applications in fuel cells, electrochemical devices, and sensors. Here, flexible indium zinc oxide (InZnO) synaptic transistors with multiple presynaptic inputs gated by proton-conducting phosphorosilicate glass-based electrolyte films are fabricated on ultrathin Si membranes. Transient characteristics of the proton gated InZnO synaptic transistors are investigated, indicating stable proton-gating behaviors. Short-term synaptic plasticities are mimicked on the proposed proton-gated synaptic transistors. Furthermore, synaptic integration regulations are mimicked on the proposed synaptic transistor networks. Spiking logic modulations are realized based on the transition between superlinear and sublinear synaptic integration. The multigates coupled flexible proton-gated oxide synaptic transistors may be interesting for neuroinspired platforms with sophisticated spatiotemporal information processing.
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