期刊
ACS APPLIED MATERIALS & INTERFACES
卷 8, 期 44, 页码 30336-30343出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b09616
关键词
resistive switching; flexible organic memory; Co9Se8; quantum dots; hybrid nanomaterials
资金
- National Basic Research Program of China [2012CB933101]
- National Natural Science Foundation of China [11274147, 11674141, 51371093]
Uniform Co9Se8 quantum dots (CSQDs) were successfully synthesized through a facile solvotherrnal method. The obtained CSQDs with average size of 3.2 +/- 0.1 nm and thickness of 1.8 +/- 0.2 nm were demonstrated good stability and strong fluorescence under UV light after being easily dispersed in both of N,N-dimethylformamide (DMF) and deionized water. We demonstrated the flexible resistive switching memory device based on the hybridization of CSQDs and polyvinylpyrrolidone (PVP) (CSQDs-PVP). The device with the Al/CSQDs-PVP/Pt/poly(ethylene terephthalate) (PET) structure represented excellent switching parameters such as high ON/OFF current ratio, low operating voltages, good stability, and flexibility. The flexible resistive switching memory device based on hybridization of CSQDs and PVP has a great potential to be used in flexible and high-performance memory applications.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据