期刊
ACS APPLIED MATERIALS & INTERFACES
卷 8, 期 14, 页码 9224-9230出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b01050
关键词
Bi1-xSbx; memristive switching; Sb ion migration; synaptic device; nanowire device
资金
- National Research Foundation of Korea (NRF) - Ministry of Science, ICT, and Future Planning [2011-0017486, 2012R1A4A1029061]
- National Research Foundation of Korea [2011-0017486] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We investigated the memristive switching behavior in bismuth-antimony alloy (Bi1-xSbx) single nano wire devices at 0.1 <= x <= 0.42. At 0.15 <= x <= 0.42, most Bi1-xSbx single nanowire devices exhibited bipolar resistive switching (RS) behavior with on/off ratios of approximately 104 and narrow variations in switching parameters. Moreover, the resistance values in the low -resistance state (LRS) were insensitive to x. On the other hand, at 0.1 <= x <= 0.15, some Bi1-xSbx single nanowire devices showed complementary RS-like behavior, which was ascribed to asymmetric contact properties. Transmission electron microscopy and elemental mapping images of Bi, Sb, and O obtained from the cross sections of the Bi1-xSbx single nanowire devices, which were cut before and after RS, revealed that the mobile species was Sb ions, and the migration of the Sb ions to the nanowire surface brought the switch to LRS. In addition, we demonstrated that two types of synaptic plasticity, namely, short-term plasticity and long-term potentiation, could be implemented in Bi1-xSbx nanowires by applying a sequence of voltage pulses with different repetition intervals.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据