期刊
ACS APPLIED MATERIALS & INTERFACES
卷 8, 期 34, 页码 22647-22657出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b06700
关键词
AZO films; ZnO nanorods; Schottky junctions; heterojunctions; self-powered photodetector
资金
- National High Technology Research and Development Program of China (863 Program) [2013AA014201]
- National Key Foundation for Exploring Scientific Instrument of China [2014YQ120351]
- Natural Science Foundation of Tianjin [15JCYBJC16700, 15JCYBJC1800, 14JCZDJC31200]
- International Cooperation Program from Science and Technology of Tianjin [14RCGHGX00872]
Designing a rational structure and developing an efficient fabrication technique for bottom-up devices offer a promising opportunity for achieving high-performance devices. In this work, we studied how Al-doped ZnO (AZO) seed layer films influence the morphology and optical and electrical properties for ZnO aligned nanorod arrays (NRs) and then the performance of ZnO NRs based ultraviolet photodetectors (UV PDs) with Au/ZnO NRs Schottky junctions and p-CuSCN/n-ZnO. NRs heterojunctions. The PD with AZO thin film with 0.5 at. % Al doping (named as AZO (0.5%)) exhibited more excellent photoresponse properties than that with pristine ZnO and AZO (1%) thin films. This phenomenon can be ascribed to the good light transmission of the AZO layer, increased density of the NRs, and improved crystallinity of ZnO NRs. The PDs based on CuSCN/ZnO NRs heterojunctions showed good rectification characteristics in the dark and self-powered UV photoresponse properties with excellent stability and reproducibility under low-intensity illumination conditions. A large responsivity located at 365 nm of 22.5 mA/W was achieved for the PD with AZO (0.5%) thin film without applied bias. The internal electric field originated from p-CuSCN/n-ZnO NRs heterojunctions can separate photogenerated carriers in ZnO NRs and drift toward the corresponding electrode.
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