期刊
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
卷 73, 期 12, 页码 1867-1872出版社
KOREAN PHYSICAL SOC
DOI: 10.3938/jkps.73.1867
关键词
RF sputtering; Ni-doped; Co oxide thin film; Gas sensor; CO; Toluene
资金
- KEIT [10043800]
- MOTIE [10043800, N0001711]
- KIAT [N0001711]
- Ministry of Science, ICT [CAP-13-1-KITECH]
- NST [CAP-13-1-KITECH]
- Rep. of Korea
- Korea Evaluation Institute of Industrial Technology (KEIT) [N0001711, 10043800] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Council of Science & Technology (NST), Republic of Korea [CAP-13-1-KITECH] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
This study proposes a route for surface modification for p-type cobalt oxide-based gas sensors. We deposit a thin layer of Ni on the Co oxide film by sputtering process and annealed at 350 degrees C for 15 min in air, which changes a typical sputtered film surface into one interlaced with a high density of hemispherical nanoparticles. Our in-depth materials characterization using transmission electron microscopy discloses that the microstructure evolution is the result of an extensive inter-diffusion of Co and Ni, and that the nanoparticles are nickel oxide dissolving some Co. Sensor performance measurement unfolds that the surface modification results in a significant sensitivity enhancement, nearly 200% increase for toluene (at 250 degrees C) and CO (at 200 degrees C) gases in comparison with the undoped samples.
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