4.1 Article

Deposition Pressure Dependent Electric Properties of (Hf, Zr)O2 Thin Films Made by RF Sputtering Deposition Method

期刊

JOURNAL OF THE KOREAN PHYSICAL SOCIETY
卷 73, 期 11, 页码 1712-1715

出版社

KOREAN PHYSICAL SOC
DOI: 10.3938/jkps.73.1712

关键词

(Hf; Zr)O-2; Sputtering; Deposition pressure; Ferroelectric

资金

  1. Electronics and Telecommunications Research Institute (ETRI) - Korean government [18ZB1800, 18ZB1100]
  2. National Research Council of Science & Technology (NST) grant by the Korea government (MSIP) [CPS-18-03-ETRI, CAP-14-01-KIST]
  3. Institute for Information & Communication Technology Planning & Evaluation (IITP), Republic of Korea [18ZB1100] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  4. National Research Council of Science & Technology (NST), Republic of Korea [CPS-18-03-ETRI, CAP-14-01-KIST] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

To study the applications for ferroelectric non-volatile memory and ferroelectric memristor, etc., deposition pressure dependent electric the properties of (Hf, Zr)O-2 thin films by RF sputtering deposition method were investigated. The bottom electrode was TiN thin film to produce stress effect on the formation of orthorhombic phase and top electrode was Pt thin film by DC sputtering deposition. Deposition pressure was varied along with the same other deposition conditions, for example, sputtering power, target to substrate distance, post-annealing temperature, annealing gas, annealing time, etc. The structural and electric properties of the above thin films were investigated. As a result, it is confirmed that the electric properties of the (Hf, Zr)O-2 thin films depend on the deposition pressure which affects structural properties of the thin films, such as, structural phase, ratio of the constituents, etc.

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