期刊
ACS APPLIED MATERIALS & INTERFACES
卷 8, 期 40, 页码 27012-27017出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b08396
关键词
ion gel; poly(3-hexylthiophene); electrolyte-gated transistors; aerosol-jet printing; dynamic performance; cut-off frequency; parasitic capacitance
资金
- National Science Foundation [ECCS-1407473]
Printed, low-voltage poly(3-hexylthiophene) (P3HT) electrolyte-gated transistors (EGTs) have favorable quasi-static characteristics, including sub 2 V operation, carrier mobility (mu) of 1 cm(2)/(V s), ON/OFF current ratio of 10(6), and static leakage current density of 10(-6) A/cm(2). Here we study the dynamic performance of P3HT EGTs in which the semiconductor, dielectric, and gate electrode were deposited using aerosol-jet printing; the source and drain electrodes were patterned by conventional microlithography. With a source-to-drain separation of 2.5 mu m, the highest theoretical achievable switching frequency is similar to 10 MHz, assuming the movement of charge through the semiconductor is the limiting step. However, the measured maximum switching frequency of P3HT EGTs to date is similar to 1 kHz, implying that another process is slowing the response. By systematically varying the device geometry, we show that the frequency is limited by the capacitance between the gate and drain (i.e., parasitic capacitance). The traditional scaling of switching time with the square of channel length (L) does not hold for P3HT EGTs. Rather, minimizing the size of the drain electrode increases the maximum switching speed. We achieve 10 kHz for P3HT EGTs with source/drain electrode dimensions of 2.5 mu m x 50 mu m and channel dimensions of 2.5 mu m x 50 mu m. Further improvements will require additional shrinkage of electrode dimensions as well as consideration of other factors such as ion gel thickness and carrier mobility.
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