期刊
ACS APPLIED MATERIALS & INTERFACES
卷 8, 期 13, 页码 8841-8848出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b01596
关键词
solar cells; hybrid materials; conducting polymers; interface; hard X-ray photoelectron spectroscopy; inorganic/organic; device stability
资金
- Hybrid Inorganic/Organic Systems (HIOS) for Optoelectronics [SFB 951]
- German Federal Ministry for Research and Education (BMBF) through project Silicon in-Situ Spectroscopy at the Synchrotron (SISSY) [BMBF03SF0403]
- Impuls- und Vernetzungsfonds of the Helmholtz Association [VH-NG-423]
We investigated the buried interface between monocrystalline n-type silicon (n-Si) and the highly conductive polymer poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS), which is successfully applied as a hole selective contact in hybrid solar cells. We show that a post-treatment of the polymer films by immersion in a suitable solvent reduces the layer thickness by removal of excess material. We prove that this post-treatment does not affect the functionality of the hybrid solar cells. Through the thin layer we are probing the chemical structure at the n-Si/PEDOT:PSS interface with synchrotron-based hard X-ray photoelectron spectroscopy (HAXPES). From the HAXPES data we conclude that the Si substrate of a freshly prepared hybrid solar cell is already oxidized immediately after preparation. Moreover, we show that even when storing the sample in inert gas such as, e.g., nitrogen the n-Si/SiOx/PEDOT:PSS interface continues to further oxidize. Thus, without further surface treatment, an unstable Si suboxide will always be present at the hybrid interface.
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