期刊
ACS Applied Materials & Interfaces
卷 8, 期 46, 页码 31887-31893出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b11675
关键词
nanoscale optical characterization; GaN; multiple quantum well; nanorods; two-photon excitation; surface passivation
资金
- Australian Government through the Australian Renewable Energy Agency (ARENA)
- European Union [280566]
- German Research Foundation (DFG) [FOR 1616]
- DFG through the Cluster of Excellence Engineering of Advanced Materials at the University of Erlangen-Nurnberg
- Deutscher Akademischer Austauschdienst (DAAD)
- China Scholarship Council (CSC) [201403120056, 201306070023]
Using advanced two-photon excitation confocal microscopy, associated with time-resolved spectroscopy, we characterize InGaN/GaN multiple quantum wells on nanorod heterostructures and demonstrate the passivation effect of a KOH treatment. High-quality InGaN/GaN nanorods were fabricated using nanosphere lithography as a candidate material for light-emitting diode devices. The depth- and time-resolved characterization at the nanoscale provides detailed carrier dynamic analysis helpful for understanding the optical properties. The nanoscale spatially resolved images of InGaN quantum well and defects were acquired simultaneously. We demonstrate that nanorod etching improves light extraction efficiency, and a proper KOH treatment has been found to reduce the surface defects efficiently and enhance the luminescence. The optical characterization techniques provide depth-resolved and time-resolved carrier dynamics with nanoscale spatially resolved mapping, which is crucial for a comprehensive and thorough understanding of nanostructured materials and provides novel insight into the improvement of materials fabrication and applications.
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