期刊
ACS APPLIED MATERIALS & INTERFACES
卷 8, 期 39, 页码 26244-26250出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b08919
关键词
planar GaAs nanowires; NWs; APT; FIB; tomography; doping
资金
- Australian Research Council [DP150100018]
- U.S. National Science Foundation DMR Grant [15-08140]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1508140] Funding Source: National Science Foundation
Intentional and unintentional doping in semiconductor nano wires undoubtedly have significant impact on the device performance. However, spatially resolved precise determination of dopant concentration is challenging due to insufficient sensitivity and resolution of conventional techniques. In this paper, quantitative 3D distribution of Si and Zn dopants in planar GaAs nanowires and their interface with AlGaAs film underneath are obtained by using a unique atom probe tomography technique, providing critical insights for the growth and potential applications of these nanowires.
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