期刊
ACS APPLIED MATERIALS & INTERFACES
卷 8, 期 24, 页码 15459-15465出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b01896
关键词
liquid metal; eutectic gallium-indium; lift-off patterning; stretchable circuit; monolithic integration
资金
- Institute for Information & Communications Technology Promotion (IITP) grant - Korea government (MSIP) [B0101-16-0133]
- Institute for Information & Communication Technology Planning & Evaluation (IITP), Republic of Korea [B0101-16-0133] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We demonstrate a new patterning technique for gallium-based liquid metals on flat substrates, which can provide both high pattern resolution (similar to 20 mu m) and alignment precision as required for highly integrated circuits. In a very similar manner as in the patterning of solid metal films by photolithography and lift-off processes, the liquid metal layer painted over the whole substrate area can be selectively removed by dissolving the underlying photoresist layer, leaving behind robust liquid patterns as defined by the photolithography. This quick and simple method makes it possible to integrate fine-scale interconnects with preformed devices precisely, which is indispensable for realizing monolithically integrated stretchable circuits. As a way for constructing stretchable integrated circuits, we propose a hybrid configuration composed of rigid device regions and liquid interconnects, which is constructed on a rigid substrate first but highly stretchable after being transferred onto an elastomeric substrate. This new method can be useful in various applications requiring both high-resolution and precisely aligned patterning of gallium-based liquid metals.
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