期刊
ACS APPLIED MATERIALS & INTERFACES
卷 8, 期 8, 页码 5408-5415出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.5b10220
关键词
thin film transistors; ZnO; hydrogenation; mobility; reliability
资金
- 973 grant of MOST [2013CBA01604]
- MOE [20120141110054]
- NSFC grant [61376085, 11574083, 11575132]
- Grant of Jiangsu [BK20130016, BK2012322]
Hydrogenation is one of the effective methods for improving the performance of ZnO thin film transistors (TFTs), which originate from the fact that hydrogen (H) acts as a defect passivator and a shallow n-type dopant in ZnO materials. However, passivation accompanied by an excessive H doping of the channel region of a ZnO TFT is undesirable because high carrier density leads to negative threshold voltages. Herein, we report that Mg/H codoping could overcome the trade-off between performance and reliability in the ZnO TFTs. The theoretical calculation suggests that the incorporation of Mg in hydrogenated ZnO decrease the formation energy of interstitial H and increase formation energy of O-vacancy (V-O). The experimental results demonstrate that the existence of the diluted Mg in hydrogenated ZnO TFTs could be sufficient to boost up mobility from 10 to 32.2 cm(2)/(V s) at a low carrier density (similar to 2.0 x 10(18) cm(-3)), which can be attributed to the decreased electron effective mass by surface band bending. The all results verified that the Mg/H codoping can significantly passivate the V-O to improve device reliability and enhance mobility. Thus, this finding clearly points the way to realize high-performance metal oxide TFTs for low-cost, large-volume, flexible electronics.
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