期刊
ACS APPLIED MATERIALS & INTERFACES
卷 8, 期 8, 页码 5416-5423出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.5b10661
关键词
epitaxial oxides; high-kappa dielectrics; germanium; semiconductor-oxide interfaces; interface traps; perovskites
资金
- National Science Foundation [CMMI-1437050]
- Office of Naval Research [N00014-10-10489]
- Air Force Office of Scientific Research [FA9550-12-10494]
- Judson S. Swearingen Regents Chair in Engineering at The University of Texas at Austin
- Div Of Civil, Mechanical, & Manufact Inn
- Directorate For Engineering [1437050] Funding Source: National Science Foundation
Germanium (Ge)-based metal-oxide-semiconductor field-effect transistors are a promising candidate for high performance, low power electronics at the 7 nm technology node and beyond. However, the availability of high quality gate oxide/Ge interfaces that provide low leakage current density and equivalent oxide thickness (EOT), robust scalability, and acceptable interface state density (D-it,) has emerged as one of the most challenging hurdles in the development of such devices. Here we demonstrate and present detailed electrical characterization of a high-kappa epitaxial oxide gate stack based on crystalline SrHfO3 grown on Ge (001) by atomic layer deposition. Metal-oxide-Ge capacitor structures show extremely low gate leakage, small and scalable EOT, and good and reducible D-it. Detailed growth strategies and postgrowth annealing schemes are demonstrated to reduce D-it. The physical mechanisms behind these phenomena are studied and suggest approaches for further reduction of D-it.
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