期刊
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
卷 124, 期 -, 页码 1-6出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.jpcs.2018.08.031
关键词
Cu-doped CdS nanowires; Bandgap; Emission wavelength; Excited state lifetime; Photoconductivity
资金
- Department of Science and Technology, Government of India [SR/FTP/PS-36/2010]
- National Research Foundation of Korea vide Korea government (MSIP) [2016R1A6A1A03012877, 2016R1D1A1B03935948, 2018R1D1A1B07051095, 2018R1D1A1B07050237]
- National Research Foundation of Korea [2018R1D1A1B07051095, 2018R1D1A1B07050237, 2016R1D1A1B03935948] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Cu-doped CdS nanowires were synthesized within the pores of anodic alumina membrane as template via electrochemical deposition. Morphological, structural, optical and photoconductive properties of the synthesized nanowires were studied. Morphological and structural properties were studied by using SEM with EDS (point & line mapper mode) and X-Ray Diffractometer. Scanning electron microscopy with point EDS and line EDS mapping confirms the deposition of pure CdS and Cu-doped CdS throughout the template length respectively. XRD investigations shows the presence of polycrystalline phase and cubic structure of pristine CdS nanowires. Optical properties were studied by UV-visible absorption spectroscopy and time resolved photoluminescence. A gradual decrease in energy band gap from 2.38 eV to 2.10 eV is observed for Cu doped CdS nanowires. Time resolved photoluminescence studies shows the red shift in emission wavelength and increase of excited state lifetimes with Cu doping and also with increase in its concentration in CdS nanowires. Current-voltage characteristics of pure and doped CdS nanowires studied at varying incident light intensity show that the Cu doped nanowires show negative photoconductivity.
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