期刊
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
卷 9, 期 23, 页码 6864-6870出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.8b03074
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- U.S. Department of Energy (DOE) [DE-AC36-08GO28308]
- Solar Photochemistry Program, Division of Chemical Sciences, Geosciences, and Biosciences, Office of Basic Energy Sciences, U.S. Department of Energy (DOE)
Although molecular charge-transfer doping is widely used to manipulate carrier density in organic semiconductors, only a small fraction of charge carriers typically escape the Coulomb potential of dopant counterions to contribute to electrical conductivity. Here, we utilize microwave and direct-current (DC) measurements of electrical conductivity to demonstrate that a high percentage of charge carriers in redox-doped semiconducting single-walled carbon nanotube (s-SWCNT) networks is delocalized as a free carrier density in the pi-electron system (estimated as >46% at high doping densities). The microwave and four-point probe conductivities of hole-doped s-SWCNT films quantitatively match over almost 4 orders of magnitude in conductance, indicating that both measurements are dominated by the same population of delocalized carriers. We address the relevance of this surprising one-to-one correspondence by discussing the degree to which local environmental parameters (e.g., tube tube junctions, Coulombic stabilization, and local bonding environment) may impact the relative magnitudes of each transport measurement.
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