期刊
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
卷 30, 期 3, 页码 2743-2749出版社
SPRINGER
DOI: 10.1007/s10854-018-0550-7
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资金
- Science and Technology Support Project of Hebei Province, China [15211111]
- National Natural Science Foundation of China [51502075]
The effects of sintering temperature and doping amount of gadolinium ions on the microstructures and electrical properties of sol gel derived Ba (Zr0.1Ti0.9) O-3+xGd ceramics were investigated in this manuscript. XRD analysis showed that the main crystalline phase of BZT-xGd ceramic samples exhibit a perovskite structure without significantly change. The sample sintered at 1350 degrees C and doped with gadolinium ions of 0.5mol% has uniform grain size and compact morphology. And the sample(1350 degrees C0.5mol%) also has a high piezoelectric charge coefficient of 131.33 pC/N, large plane electromechanical coupling coefficient of 0.22, high dielectric constant of 10504, and small dielectric loss of 0.01. The correlation of dielectric and piezoelectric properties of BZT-xGd ceramics with doping amount of Gd3+ ion has been explained by the lattice theory.
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