期刊
JOURNAL OF CRYSTAL GROWTH
卷 511, 期 -, 页码 56-60出版社
ELSEVIER
DOI: 10.1016/j.jcrysgro.2019.01.016
关键词
Low dimensional structures; Molecular beam epitaxy; Semiconducting III-V materials; Laser Diodes
资金
- UK EPSRC [EP/P006973/1]
- EPSRC National Epitaxy Facility
- European project H2020-ICT-PICTURE [780930]
- Royal Academy of Engineering [RF201617/16/28]
- Investissments d'avenir [IRT Nanoelec: ANR-10-IRT-05, Need for IoT: ANR-15-IDEX-02]
- Royal Academy of Engineering
- Engineering and Physical Sciences Research Council [EP/J013048/1] Funding Source: researchfish
- EPSRC [EP/J013048/1, EP/P006973/1, EP/J012904/1] Funding Source: UKRI
The concept of high-efficiency, high-reliability and low-threshold electrically pumped lasers monolithically grown on silicon has attracted great attention over the past several decades, as a promising on-chip optical source for Si photonics. In this paper, we report an electrically pumped continuous-wave (CW) 1.3 mu m InAs/GaAs quantum dot (QD) lasers grown on a complementary metal-oxidesemiconductor (CMOS) compatible Si exact (0 0 1) substrate with reduced GaAs buffer thickness down to similar to 2 mu m. A threshold current density (Jth) as low as similar to 160 A/cm(2) has been achieved at room temperature. The characteristic temperature (T-0) obtained is similar to 60.8 K and laser operation is observed up to 52 degrees C under CW mode. These results suggest that an O-band InAs/GaAs QD laser could be very promising to develop a monolithically integrated on-chip optical source for Si photonics.
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