期刊
JOURNAL OF APPLIED PHYSICS
卷 125, 期 2, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5063737
关键词
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资金
- Office of Science, Office of Basic Energy Sciences, at the U.S. Department of Energy (DOE) [DE-AC02-05CH11231]
- Stevens Institute of Technology
The thermal memristor is the equivalent of the electrical memristor but in the thermal domain. The defining characteristic of the electrical memristor is the pinched Lissajous-type i-v curve (current to voltage difference); therefore, analogous behavior in the q-T curve (heat flux to temperature difference) should be the distinguishing feature of a thermal memristor. Herein, we propose a theoretical framework to realize thermal memristor devices using a solid-solid phase change material, tungsten doped vanadium dioxide. We show that by adding a periodic thermal input to the device, it is possible to obtain the characteristic pinched Lissajous type q-T curve that is indicative of the existence of a thermal memristor. Published under license by AIP Publishing.
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